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| AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz--1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19125EU AGR19125EF Sym Ri JC Ri JC Value 0.5 0.5 Unit C/W C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR19125EU AGR19125EF Derate Above 25 C: AGR19125EU AGR19125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit 65 Vdc VDSS VGS -0.5, +15 Vdc PD PD -- -- TJ 350 350 2.0 2.0 200 W W W/C W/C C AGR19125EU (unflanged) AGR19125EF (flanged) Figure 1. Available Packages Features Typical 2 carrier, N-CDMA performance for VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz, F2 = 1961.25 MHz, IS-95 (pilot, paging, sync, traffic channels 8--13) 1.2288 MHz channel bandwidth (BW). Adjacent channels measured over a 30 kHz BW at F1 - 0.885 MHz and F2 + 0.885 MHz. Intermodulation distortion products measured over a 1.2288 MHz BW at F1 - 2.5 MHz and F2 + 2.5 MHz. Peak/Average (P/A) = 9.72 dB at 0.01% probability on CCDF: -- Output power: 24 W. -- Power gain: 15 dB. -- Efficiency: 24%. -- ACPR: -48 dBc. -- IMD3: -34 dBc. -- Return loss: -10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W continuous wave (CW) output power. Large signal impedance parameters available. TSTG -65, +150 C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR19125E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Drain-source Breakdown Voltage (VGS = 0, ID = 400 A) 200 Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 A) Gate Quiescent Voltage (VDS = 28 V, ID = 1200 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Common-source Amplifier Power Gain* Drain Efficiency* Third-order Intermodulation Distortion* (IMD3 measured over 1.2288 MHz BW @ f1 - 2.5 MHz and f2 + 2.5 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 30 kHz @ f1 - 0.885 MHz and f2 + 0.885 MHz) Input Return Loss* Power Output, 1 dB Compression Point (VDD = 28 V, fC = 1960.0 MHz) Output Mismatch Stress (VDD = 28 V, POUT = 125 W (CW), IDQ = 1250 mA, fC = 1960.0 MHz VSWR = 10:1; [all phase angles]) CRSS -- 3.0 -- pF Symbol Min Typ Max U nit Off Characteristics Symbol V(BR)DSS IGSS IDSS GFS VGS(TH) VGS(Q) VDS(ON) Min 65 -- -- -- -- -- -- Typ -- -- -- 9 -- 3.8 0.08 Max -- 4 200 12 -- 4.8 -- -- Unit Vdc Adc Adc S Vdc Vdc Vdc On Characteristics Functional Tests (in Agere Systems Supplied Test Fixture) (in Supplied Test Fixture) GPS IM3 ACPR IRL P1dB 14 -- -- -- -- -- 15 24 -34 -48 -10 125 -- -- -- -- -- -- dB % dBc dBc dB W No degradation in output power. * IS-95 N-CDMA P/A = 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz. VDD = 28 Vdc, IDQ = 1250 mA, and POUT = 24 W avg. AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations for AGR19125E FB1 VGG R1 R2 + C2 C3 C4 + C5 Z6 Z8 Z1 RF INPUT C1 Z2 Z3 Z4 Z5 2 1 3 DUT Z9 Z10 Z11 C16 C17 Z13 RF OUTPUT R3 Z7 C6 C7 C8 C9 C10 C11 + C12 + C13 C14 C15 VDD PINS: 1. DRAIN 2. GATE 3. SOURCE A. Schematic Parts List: ? Microstrip Line: Z1 0.785 in. x 0.065 in. Z2 0.205 in. x 0.065 in. Z3 0.070 in. x 0.255 in. Z4 0.378 in. x 0.065 in. Z5 0.177 in. x 0.860 in. Z6 0.050 in. x 0.247 in. Z7 0.050 in. x 0.593 in. Z8 0.500 in. x 1.030 in. Z9 0.323 in. x 0.185 in. Z10 0.465 in. x 0.115 in. Z11 0.075 in. x 0.065 in. Z12 0.252 in. x 0.065 in. (R) ? ATC chip capacitor: C1 10 pF 100B100JW500X C5, C14, C15: 5.6 pF100B5R6BW500X C9 6.8 pF 100B6R8JW500X C10 1.2 pF 100B1R2BW500X C16: 15 pF 100B150JW500X. (R) ? Sprague tantalum surface-mount chip capacitor: C2, C4, C11, C12: 22 F, 35 V. (R) ? Kemet 1206 size chip capacitor: C6, C13: 0.1 F C1206104K5RAC7800. (R) ? Murata 0805 size chip capacitor: C8 0.01 F GRM40X7R103K100AL. (R) ? Johanson Giga-Trim variable capacitor: C17 0.6 pF to 4.5 pF 27271SL. ? 1206 size chip capacitor: C3, C7: 22000 pF. ? 1206 size chip resistor: R1 1 k; R2 560 k; R3 4.7 . (R) ? Fair-Rite ferrite bead: FB1 2743019447. (R) ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR19125E Test Circuit AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170 U CT IN D 90 0.3 0.5 0.7 1.0 1.2 1.4 1.6 3.0 0.1 0.4 0.6 0.8 0.9 1.8 2.0 0.2 4.0 5.0 20 LOA D < 0.49 RD TOW A 7 TH S 0.4 -170 EN G V EL WA 60 < -90 -1 0.1 o) jB/ Y E (NC f1 0.48 0.6 -85 A PT CE US ES 4 0.0 0 -15 -80 IV CT 0.4 DU 0.3 6 -75 ,O o) 5 .45 0 14 -70 06 0. 0 -65 .5 0.6 -60 1.6 0.7 1.4 0.8 1.2 5 0.9 -5 1.0 50 5 -4 - MHz (f ) 1930 (f1) 1960 (f2) 1990 (f3) ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 4.22 - j6.13 1.63 - j1.42 4.02 - j5.80 1.60 - j1.19 3.91 - j5.55 1.74 - j1.18 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances F 0. 32 0. 1.8 18 0 -5 -25 44 0. 0.3 0.1 3 2. 0 7 -30 -60 0.3 0.1 4 6 - 35 -70 0.35 0.15 0.36 0.14 -4 0 -80 0.37 0.13 0.4 0.2 -90 0.12 0.38 0.11 -100 0.39 CA P AC ITI VE 0.1 0.4 -110 RE AC TA N 0.0 0.4 9 1 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j 0. 0 4 Z X/ - -20 0.0 3. 0 0.6 f1 R IN -15 4.0 0.8 ZS 1. 0 f3 5.0 Z0 = 10 1. 0.2 0 -10 0. 8 10 ZL 0.4 20 f3 0.2 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 10 50 0. 8 0.6 0.4 10 0.1 -1 20 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES LE OF ANG 0.2 50 -20 0.2 2 0.2 8 0.2 1 -30 0.2 0.3 0 .29 -4 0 0. 19 0. 31 0. 07 30 0. 43 AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 140.0 POUT OUTPUT POWER (W), , EFFICIENCY (%)S 0.0 -5.0 -10.0 -15.0 IRL -20.0 -25.0 -30.0 IRL, INPUT RETURN LOSS (dB)S 120.0 100.0 80.0 60.0 40.0 20.0 0.0 EFFICIENCY POUT 0.00 1.00 2.00 3.00 4.00 5.00 6.00 PIN, INPUT POWER (W)S TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz. Figure 4. Output Power and Efficiency vs. Input Power 16.00 IDQ = 1500 mA Gps, POWER GAIN (dB)S 15.00 IDQ = 1250 mA IDQ = 900 mA 14.00 13.00 12.00 1.00 10.00 100.00 1000.00 POUT, OUTPUT POWER (W)S TEST CONDITIONS: VDD = 28 V, F = 1960 MHz, CW MEASUREMENT. Figure 5. Power Gain vs. Output Power AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 16 IDQ = 1500 mA Gps, POWER GAIN (dB)S 15 IDQ = 1250 mA IDQ = 900 mA 14 13 12 10 100 POUT, OUTPUT POWER (W) PEPS 1000 TEST CONDITIONS: VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING. Figure 6. Two-Tone Gain vs. Output Power 45 40 Gps, POWER GAIN (dB), DRAINS EFFICIENCY (%)S 5 EFFICIENCY 0 -5 -10 -15 -20 -25 IMD3 -30 -35 IRL, INPUT RETURN LOSS (dB), IMD3,S INTERMODULATION DISTORTIONS (dBc)S 35 30 25 20 15 10 5 0 1880 1900 1920 1940 1960 1980 Gps IRL 2000 2020 2040 TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING. f, FREQUENCY (MHz)S Figure 7. Two-Tone Broadband Performance AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) IMD, INTERMODULATION DISTORTION (dBc) S IMD3 -25 -35 IMD5 IMD7 -45 -55 100 1000 10000 100000 TONE SPACING (kHz)S TEST CONDITIONS: VDD = 28 V, F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP). Figure 8. Two-Tone Intermodulation Products vs. Tone Spacing 44 43 DRAIN EFFICIENCY (%)S 5 0 EFFICIENCY -5 -10 -15 -20 IMD3 -25 -30 26 27 28 29 30 -35 IMD3, INTERMODULATION S DISTORTION (dBc)S 42 41 40 39 38 37 36 24 25 VDD, DRAIN SUPPLY (V)S TEST CONDITIONS: F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING. Figure 9. Two-Tone Intermodulation Distortion and Efficiency vs. Drain Supply AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) -10 IMD3, THIRD ORDER INTERMODULATION S DISTORTION (dBc)S -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 10 100 POUT, OUTPUT POWER (W) PEPS 1000 IDQ = 1500 mA IDQ = 1250 mA IDQ = 900 mA TEST CONDITIONS: VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING. Figure 10. Third Order Intermodulation Distortion vs. Output Power 0.0 50.0 -10.0 45.0 EFFICIENCY 40.0 3rd ORDER IMD, INTERMODULATION DISTORTION (dBc) S -20.0 35.0 5th ORDER -40.0 30.0 25.0 -50.0 20.0 -60.0 7th ORDER 15.0 -70.0 10.0 -80.0 1.00 10.00 100.00 1000.00 5.0 Pout, OUTPUT POWER (WATTS) PEP TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz, 100 kHz TONE SPACING. Figure 11. Intermodulation Distortion Products vs. Output Power DRAIN EFFICIENCY (%)S -30.0 AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 40.00 35.00 30.00 25.00 20.00 15.00 10.00 5.00 0.00 1.00 0.0 -10.0 -20.0 EFFICIENCY IMD3 Gps -30.0 -40.0 -50.0 ACPR -60.0 -70.0 100.00 10.00 POUT, OUTPUT POWER (W)S TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, F1 = 1960 MHz, F2 = 1962.5 MHz. 9 IS-95 CHANNELS/CARRIER, P/A RATIO = 9.72 dB AT 0.01% PROBABILITY. Figure 12. Two Carrier IS-95 CDMA Performance vs. Output Power 30 Gps, POWER GAIN (dB), DRAINS EFFICIENCY (%)S 5 IRL, INPUT RETURN LOSS (dB), IMD3,S INTERMODULATION DISTORTION, AND ACPR (dBc) S 25 20 15 10 5 0 EFFICIENCY -5 -15 Gps IMD3 -25 -35 -45 -55 IRL ACPR 1900 1920 1940 1960 1980 2000 2020 1880 2040 TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, POUT = 24 W, 2 CARRIERS. 2.5 MHz SPACING, P/A RATIO = 9.72 dB AT 0.01%. f, FREQUENCY (MHz)S Figure 13. Two Carrier CDMA (IS-95) Broadband Performance IMD3 (dBc), ACPR (dBc) S Gps, POWER GAIN (dB) DRAIN SEFFICIENCY (%) S AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. Cut lead indicates drain. AGR19125EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR19125EU XXXX 3 1 3 2 2 AGR19125EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR19125EF XXXX 1 3 3 2 2 XXXX - 4 Digit Trace Code |
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